ds30383 rev. 3 - 2 1 of 3 ddtb (xxxx) u www.diodes.com diodes incorporated ddtb (xxxx) u pnp pre-biased 500 ma sot-323 surface mount transistor epitaxial planar die construction complementary npn types available (ddtd) built-in biasing resistors, r1, r2 available in lead free/rohs compliant version (note 2) features maximum ratings @ t a = 25 c unless otherwise specified a m j l f d b c h k g 2 1 3 in gnd out mechanical data case: sot-323 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish annealed over alloy 42 leadframe). please see ordering information, note 4, on page 3 marking: date code and type code, see page 3 marking code: see table below ordering information (see page 3) weight: 0.006 grams (approximate) t c u d o r p w e n (2) in r 1 r 2 gnd (1) out (3) p/n r1 (nom) r2 (nom) type code ddtb113eu ddtb123eu ddtb143eu ddtb114eu ddtb122ju ddtb113zu ddtb123yu ddtb133hu ddtb123tu ddtb143tu ddtb114tu ddtb114gu 1k 2.2k 4.7k 10k 0.22k 1k 2.2k 3.3k 2.2k 4.7k 10k 0 1k 2.2k 4.7k 10k 4.7k 10k 10k 10k open open open 10k p60 p61 p62 p63 p64 p65 p66 p67 p69 p70 p71 p72 characteristic symbol value unit supply voltage, (3) to (1) v cc -50 v input voltage, (2) to (1) ddtb113eu ddtb123eu ddtb143eu ddtb114eu ddtb122ju ddtb113zu ddtb123yu ddtb133hu v in +10 to -10 +10 to -12 +10 to -30 +10 to -40 +5 to -5 +5 to -10 +5 to -12 +6 to -20 v input voltage, (1) to (2) ddtb123tu ddtb143tu ddtb114tu ddtb114gu v ebo (max) -5 v output current all i c -500 ma power dissipation p d 200 mw thermal resistance, junction to ambient air (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm note: 1. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead.
ds30383 rev. 3 - 2 2 of 3 ddtb (xxxx) u www.diodes.com characteristic symbol min typ max unit test condition input voltage ddtb113eu ddtb123eu ddtb143eu ddtb114eu ddtb122ju ddtb113zu ddtb123yu ddtb133hu v l(off) -0.5 -0.5 -0.5 -0.5 -0.5 -0.3 -0.3 -0.3 v v cc = -5v, i o = -100 a ddtb113eu ddtb123eu ddtb143eu ddtb114eu ddtb122ju ddtb113zu ddtb123yu ddtb133hu v l(on) -3.0 -3.0 -3.0 -3.0 -3.0 -2.0 -2.0 -2.0 v v o = -0.3v, i o = -20ma v o = -0.3v, i o = -20ma v o = -0.3v, i o = -20ma v o = -0.3v, i o = -10ma v o = -0.3v, i o = -30ma v o = -0.3v, i o = -20ma v o = -0.3v, i o = -20ma v o = -0.3v, i o = -20ma output voltage v o(on) -0.3v v i o /i l = -50ma/-2.5ma input current ddtb113eu ddtb123eu ddtb143eu ddtb114eu ddtb122ju ddtb113zu ddtb123yu ddtb133hu i l -7.2 -3.8 -1.8 -0.88 -28 -7.2 -3.6 -2.4 ma v i = -5v output current i o(off) -0.5 a v cc = -50v, v i = 0v dc current gain ddtb113eu ddtb123eu ddtb143eu ddtb114eu ddtb122ju ddtb113zu ddtb123yu ddtb133hu g l 33 39 47 56 47 56 56 56 v o = -5v, i o = -50ma gain-bandwidth product* f t 200 mhz v ce = -10v, i e = -5ma, f = 100mhz electrical characteristics r1, r2 types @ t a = 25 c unless otherwise specified t c u d o r p w e n * transistor - for reference only characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 v i c = -50 a collector-emitter breakdown voltage bv ceo -40 v i c = -1ma emitter-base breakdown voltage ddtb123tu ddtb143tu ddtb114tu ddtb114gu bv ebo -5 v i e = -50 a i e = -50 a i e = -50 a i e = -720 a collector cutoff current i cbo -0.5 a v cb = -50v emitter cutoff current ddtb123tu ddtb143tu ddtb114tu ddtb114gu i ebo -300 -0.5 -0.5 -0.5 -580 a v eb = -4v collector-emitter saturation voltage v ce(sat) -0.3 v i c = -50ma, i b = -2.5ma dc current transfer ratio ddtb123tu ddtb143tu ddtb114tu ddtb114gu h fe 100 100 100 56 250 250 250 600 600 600 i c = -5ma, v ce = -5v gain-bandwidth product* f t 200 mhz v ce = -10v, i e = 5ma, f = 100mhz electrical characteristics r1-only, r2-only types @ t a = 25 c unless otherwise specified * transistor - for reference only
ds30383 rev. 3 - 2 3 of 3 ddtb (xxxx) u www.diodes.com t c u d o r p w e n xxx = product type marking code, see table on page 1 ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september xxx ym marking information notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free/rohs compliant version part number, please add "-f" suffix to the part number above. example : ddtb114gu-7-f. device packaging shipping ddtb113eu-7 sot-323 3000/tape & reel ddtb123eu-7 sot-323 3000/tape & reel ddtb143eu-7 sot-323 3000/tape & reel DDTB114EU-7 sot-323 3000/tape & reel ddtb122ju-7 sot-323 3000/tape & reel ddtb113zu-7 sot-323 3000/tape & reel ddtb123yu-7 sot-323 3000/tape & reel ddtb133hu-7 sot-323 3000/tape & reel ddtb123tu-7 sot-323 3000/tape & reel ddtb143tu-7 sot-323 3000/tape & reel ddtb114tu-7 sot-323 3000/tape & reel ddtb114gu-7 sot-323 3000/tape & reel ordering information (note 3) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw date code key
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